Infineon OptiMOS™ -T2 N-Channel MOSFET, 80 A, 60 V, 3-Pin I2PAK IPI80N06S4L07AKSA2
RS Stock No. 214-9067
Brand Infineon
- Channel Mode: Enhancement
- Maximum Drain Source Resistance: 0.0067 O
- Maximum Drain Source Voltage: 60 V
AED 177.68
340 in stock now
Infineon OptiMOS™ -T2 N-Channel MOSFET, 80 A, 60 V, 3-Pin I2PAK IPI80N06S4L07AKSA2
RS Stock No. 214-9068
Brand Infineon
- Maximum Gate Threshold Voltage: 2.2V
- Section Link: https://ae.rsdelivers.com/category/electronic-components-power-connectors/semiconductors
- Series: OptiMOS™ -T2
AED 35.02
340 in stock now
Infineon OptiMOS™ -T2 N-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 IPP80N06S407AKSA2
RS Stock No. 215-2547
Brand Infineon
- Category: MOSFETs
- Number of Elements per Chip: 1
- Transistor Material: Si
AED 206.00
Temporarily out of stock
Infineon OptiMOS™ -T2 N-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 IPP80N06S407AKSA2
RS Stock No. 215-2548
Brand Infineon
- Maximum Continuous Drain Current: 80 A
- Maximum Drain Source Voltage: 60 V
- Mounting Type: Through Hole
AED 71.07
Temporarily out of stock
Infineon OptiMOS™ -T2 N-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD90N03S4L02ATMA1
RS Stock No. 165-5602
Brand Infineon
- Channel Mode: Enhancement
- Channel Type: N
- Transistor Configuration: Single
AED 7.853.75
2235 in stock now
Infineon OptiMOS™ -T2 N-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD90N03S4L02ATMA1
RS Stock No. 825-9398
Brand Infineon
- Channel Mode: Enhancement
- Series: OptiMOS™ -T2
- Transistor Material: Si
AED 34.51
2235 in stock now
Infineon OptiMOS™ -T2 N-Channel MOSFET, 90 A, 40 V, 3-Pin D2PAK IPB90N04S402ATMA1
RS Stock No. 857-4565
Brand Infineon
- Minimum Operating Temperature: -55 °C
- Number of Elements per Chip: 1
- Series: OptiMOS™ -T2
AED 5.407.50
in stock now
Infineon OptiMOS™ -T2 N-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK IPD50N04S410ATMA1
RS Stock No. 857-4600
Brand Infineon
- Category: MOSFETs
- Maximum Gate Source Voltage: -20 V, +20 V
- Mounting Type: Surface Mount
AED 3.605.00
in stock now
Infineon N-Channel MOSFET, 120 A, 80 V, 3-Pin D2PAK IPB120N08S403ATMA1
RS Stock No. 214-4365
Brand Infineon
- Channel Type: N
- Number of Elements per Chip: 1
- Series: OptiMOS™ -T2
AED 13.081.00
8000 in stock now
Infineon N-Channel MOSFET, 120 A, 80 V, 3-Pin D2PAK IPB120N08S403ATMA1
RS Stock No. 214-4366
Brand Infineon
- Maximum Drain Source Resistance: 0.0025 Ω
- Mounting Type: Surface Mount
- Pin Count: 3
AED 126.43
8000 in stock now
Infineon N-Channel MOSFET, 120 A, 80 V, 3-Pin D2PAK IPB120N08S404ATMA1
RS Stock No. 214-9014
Brand Infineon
- Channel Mode: Enhancement
- Channel Type: N
- Maximum Gate Threshold Voltage: 4V
AED 80.60
885 in stock now
Infineon N-Channel MOSFET, 45 A, 60 V, 3-Pin D2PAK IPB45N06S4L08ATMA3
RS Stock No. 214-9020
Brand Infineon
- Category: MOSFETs
- Channel Mode: Enhancement
- Channel Type: N
AED 48.41
2980 in stock now
Infineon N-Channel MOSFET, 90 A, 40 V, 3-Pin DPAK IPD90N04S403ATMA1
RS Stock No. 214-9054
Brand Infineon
- Channel Mode: Enhancement
- Maximum Continuous Drain Current: 90 A
- Number of Elements per Chip: 1
AED 5.407.50
17440 in stock now
Infineon N-Channel MOSFET, 90 A, 40 V, 3-Pin DPAK IPD90N04S403ATMA1
RS Stock No. 214-9055
Brand Infineon
- Maximum Continuous Drain Current: 90 A
- Maximum Drain Source Resistance: 0.0032 O
- Series: OptiMOS™ -T2
AED 45.58
17440 in stock now
Infineon N-Channel MOSFET, 80 A, 60 V, 3-Pin I2PAK IPI80N06S407AKSA2
RS Stock No. 214-9065
Brand Infineon
- Maximum Continuous Drain Current: 80 A
- Maximum Drain Source Voltage: 60 V
- Mounting Type: Through Hole
AED 177.68
390 in stock now
Infineon N-Channel MOSFET, 120 A, 80 V, 3-Pin TO-220 IPP120N08S403AKSA1
RS Stock No. 214-9087
Brand Infineon
- Maximum Drain Source Resistance: 0.0028 O
- Series: OptiMOS™ -T2
- Transistor Material: Si
AED 625.72
1055 in stock now
Infineon N-Channel MOSFET, 25 A, 60 V, 3-Pin DPAK IPD25N06S4L30ATMA2
RS Stock No. 215-2503
Brand Infineon
- Category: MOSFETs
- Maximum Drain Source Voltage: 60 V
- Package Type: DPAK (TO-252)
AED 4.635.00
7340 in stock now
Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S4H1ATMA2
RS Stock No. 218-3032
Brand Infineon
- Maximum Drain Source Resistance: 0.002 Ω
- Number of Elements per Chip: 1
- Transistor Material: Si
AED 8.188.50
960 in stock now
Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S4H1ATMA2
RS Stock No. 218-3033
Brand Infineon
- Channel Type: N
- Maximum Continuous Drain Current: 120 A
- Maximum Gate Threshold Voltage: 4V
AED 89.10
960 in stock now
Infineon N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD50N06S4L12ATMA2
RS Stock No. 218-3044
Brand Infineon
- Channel Mode: Enhancement
- Maximum Drain Source Voltage: 60 V
- Pin Count: 3
AED 3.991.25
6000 in stock now
Infineon N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD50N06S4L12ATMA2
RS Stock No. 218-3045
Brand Infineon
- Maximum Drain Source Resistance: 0.012 Ω
- Maximum Drain Source Voltage: 60 V
- Series: OptiMOS™ -T2
AED 74.16
6000 in stock now
Infineon N-Channel MOSFET, 86 A, 40 V, 3-Pin DPAK IPD90N04S405ATMA1
RS Stock No. 218-3052
Brand Infineon
- Channel Mode: Enhancement
- Maximum Continuous Drain Current: 86 A
- Mounting Type: Surface Mount
AED 3.862.50
11255 in stock now
Infineon N-Channel MOSFET, 86 A, 40 V, 3-Pin DPAK IPD90N04S405ATMA1
RS Stock No. 218-3053
Brand Infineon
- Number of Elements per Chip: 1
- Pin Count: 3
- Series: OptiMOS™ -T2
AED 46.35
11255 in stock now
Infineon N-Channel MOSFET, 45 A, 60 V, 3-Pin I2PAK IPI45N06S409AKSA2
RS Stock No. 218-3061
Brand Infineon
- Maximum Continuous Drain Current: 45 A
- Number of Elements per Chip: 1
- Package Type: I2PAK (TO-262)
AED 329.60
490 in stock now
