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STMicroelectronics Surface Mount MOSFET, 379 A, 1200 V, 9-Pin ACEPACK DRIVE ADP360120W3-L

STMicroelectronics Surface Mount MOSFET, 379 A, 1200 V, 9-Pin ACEPACK DRIVE ADP360120W3-L

RS Stock No. 033-0413

Brand STMicroelectronics

  • Maximum Continuous Drain Current: 379 A
  • Mounting Type: Surface Mount
  • Package Type: ACEPACK DRIVE

AED 10.768.97

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ROHM RV2E014AJ Type N-Channel MOSFET, 1.4 A, 30 V Enhancement, 3-Pin Surface Mount

ROHM RV2E014AJ Type N-Channel MOSFET, 1.4 A, 30 V Enhancement, 3-Pin Surface Mount

RS Stock No. 267-2430

Brand ROHM

  • Channel Type: N
  • Number of Elements per Chip: 1
  • Section: Semiconductors

AED 5.392.80

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ROHM RV2E014AJ Type N-Channel MOSFET, 1.4 A, 30 V Enhancement, 3-Pin Surface Mount RV2E014AJT2CL

ROHM RV2E014AJ Type N-Channel MOSFET, 1.4 A, 30 V Enhancement, 3-Pin Surface Mount RV2E014AJT2CL

RS Stock No. 267-2431

Brand ROHM

  • Channel Type: N
  • Package Type: Surface Mount
  • Section Link: https://ae.rsdelivers.com/category/electronic-components-power-connectors/semiconductors

AED 43.54

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Toshiba Single 1 Type N-Channel MOSFET, 20 V Enhancement, 3-Pin SOT-723 SSM3K37MFV,L3F(B

Toshiba Single 1 Type N-Channel MOSFET, 20 V Enhancement, 3-Pin SOT-723 SSM3K37MFV,L3F(B

RS Stock No. 171-2404

Brand Toshiba

  • Height: 0.5mm
  • Maximum Gate Source Voltage Vgs: 10 V
  • Package Type: SOT-723

AED 1.348.20

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Vishay EF Series N channel-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-252 SIHD250N60EF-GE3

Vishay EF Series N channel-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-252 SIHD250N60EF-GE3

RS Stock No. 073-5240

Brand Vishay

  • Category Link: https://ae.rsdelivers.com/browse/electronic-components-power-connectors/semiconductors/discrete-semiconductors/mosfets
  • Channel Type: N channel
  • Pin Count: 3

AED 18.87

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Vishay TrenchFET P-Channel MOSFET, -3.1 A, -20 V Enhancement, 3-Pin SOT-23 SI2301HDS-T1-GE3

Vishay TrenchFET P-Channel MOSFET, -3.1 A, -20 V Enhancement, 3-Pin SOT-23 SI2301HDS-T1-GE3

RS Stock No. 073-5212

Brand Vishay

  • Category: MOSFETs
  • Maximum Operating Temperature: 150°C
  • Product Type: MOSFET

AED 7.53

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Vishay TrenchFET N channel-Channel MOSFET, 2.6 A, 20 V Enhancement, 3-Pin SOT-23 SI2302HDS-T1-GE3

Vishay TrenchFET N channel-Channel MOSFET, 2.6 A, 20 V Enhancement, 3-Pin SOT-23 SI2302HDS-T1-GE3

RS Stock No. 073-5213

Brand Vishay

  • Maximum Drain Source Voltage Vds: 20V
  • Section: Semiconductors
  • Typical Gate Charge Qg @ Vgs: 3.5nC

AED 7.47

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Vishay TrenchFET N channel-Channel MOSFET, 5.4 A, 60 V Enhancement, 8-Pin SO-8 SQ9945CEY-T1_GE3

Vishay TrenchFET N channel-Channel MOSFET, 5.4 A, 60 V Enhancement, 8-Pin SO-8 SQ9945CEY-T1_GE3

RS Stock No. 073-5225

Brand Vishay

  • Maximum Operating Temperature: 175°C
  • Product Type: MOSFET
  • Typical Gate Charge Qg @ Vgs: 8.9nC

AED 11.91

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Toshiba Single 1 Type N-Channel MOSFET, 20 V Enhancement, 3-Pin SOT-723 SSM3K37MFV

Toshiba Single 1 Type N-Channel MOSFET, 20 V Enhancement, 3-Pin SOT-723 SSM3K37MFV

RS Stock No. 171-2483

Brand Toshiba

  • Channel Type: Type N
  • Length: 0.8mm
  • Section: Semiconductors

AED 39.32

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ROHM RQ6E050AT Type P-Channel MOSFET, 5 A, 30 V Enhancement, 6-Pin TSMT-6 RQ6E050ATTCR

ROHM RQ6E050AT Type P-Channel MOSFET, 5 A, 30 V Enhancement, 6-Pin TSMT-6 RQ6E050ATTCR

RS Stock No. 124-6805

Brand ROHM

  • Product Type: MOSFET
  • Section: Semiconductors
  • Super Section: Discrete Semiconductors

AED 11.24

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Vishay TrenchFET N channel-Channel MOSFET, 5.6 A, 40 V Enhancement, 3-Pin SOT-23 SI2318HDS-T1-GE3

Vishay TrenchFET N channel-Channel MOSFET, 5.6 A, 40 V Enhancement, 3-Pin SOT-23 SI2318HDS-T1-GE3

RS Stock No. 073-5214

Brand Vishay

  • Category Link: https://ae.rsdelivers.com/browse/electronic-components-power-connectors/semiconductors/discrete-semiconductors/mosfets
  • Super Section: Discrete Semiconductors
  • Typical Gate Charge Qg @ Vgs: 5.8nC

AED 7.64

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STMicroelectronics G-HEMT P-Channel Power MOSFET, 6 A, 700 V Enhancement, 2-Pin TO-252 SGT350R70GTK

STMicroelectronics G-HEMT P-Channel Power MOSFET, 6 A, 700 V Enhancement, 2-Pin TO-252 SGT350R70GTK

RS Stock No. 071-9637

Brand STMicroelectronics

  • Category: MOSFETs
  • Maximum Drain Source Resistance Rds: 350mΩ
  • Maximum Drain Source Voltage Vds: 700V

AED 11.094.56

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STMicroelectronics G-HEMT P-Channel Power MOSFET, 6 A, 700 V Enhancement, 2-Pin TO-252 SGT350R70GTK

STMicroelectronics G-HEMT P-Channel Power MOSFET, 6 A, 700 V Enhancement, 2-Pin TO-252 SGT350R70GTK

RS Stock No. 071-9638

Brand STMicroelectronics

  • Maximum Continuous Drain Current Id: 6A
  • Pin Count: 2
  • Typical Gate Charge Qg @ Vgs: 1.5nC

AED 4.44

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IXYS Single GigaMOS, HiperFET 1 Type N-Channel MOSFET, 132 A, 250 V Enhancement, 24-Pin SMPD MMIX1F180N25T

IXYS Single GigaMOS, HiperFET 1 Type N-Channel MOSFET, 132 A, 250 V Enhancement, 24-Pin SMPD MMIX1F180N25T

RS Stock No. 146-1770

Brand IXYS

  • Maximum Operating Temperature: 150°C
  • Pin Count: 24
  • Section: Semiconductors

AED 4.316.49

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DiodesZetex Isolated 2 Type N-Channel MOSFET, 10 A, 20 V Enhancement, 6-Pin WDFN DMN2013UFX-7

DiodesZetex Isolated 2 Type N-Channel MOSFET, 10 A, 20 V Enhancement, 6-Pin WDFN DMN2013UFX-7

RS Stock No. 165-8416

Brand DiodesZetex

  • Category: MOSFETs
  • Category Link: https://ae.rsdelivers.com/browse/electronic-components-power-connectors/semiconductors/discrete-semiconductors/mosfets
  • Pin Count: 6

AED 3.876.08

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onsemi Single PowerTrench 1 Type N-Channel MOSFET, 9 A, 30 V Enhancement, 8-Pin SOIC FDS6692A

onsemi Single PowerTrench 1 Type N-Channel MOSFET, 9 A, 30 V Enhancement, 8-Pin SOIC FDS6692A

RS Stock No. 166-2832

Brand onsemi

  • Category: MOSFETs
  • Height: 1.575mm
  • Minimum Operating Temperature: -55°C

AED 7.021.88

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DiodesZetex Isolated 2 Type P-Channel MOSFET, 5.8 A, 20 V Enhancement, 8-Pin SOP DMP2066LSD-13

DiodesZetex Isolated 2 Type P-Channel MOSFET, 5.8 A, 20 V Enhancement, 8-Pin SOP DMP2066LSD-13

RS Stock No. 169-0693

Brand DiodesZetex

  • Channel Mode: Enhancement
  • Channel Type: Type P
  • Section: Semiconductors

AED 4.494.00

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DiodesZetex Single 1 Type N-Channel MOSFET, 11 A, 12 V Enhancement, 6-Pin UDFN-2020 DMN1019UFDE-7

DiodesZetex Single 1 Type N-Channel MOSFET, 11 A, 12 V Enhancement, 6-Pin UDFN-2020 DMN1019UFDE-7

RS Stock No. 169-0810

Brand DiodesZetex

  • Channel Type: Type N
  • Length: 2.05mm
  • Maximum Drain Source Voltage Vds: 12V

AED 3.370.50

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Toshiba Single 1 Type N-Channel MOSFET, 6 A, 30 V Enhancement, 3-Pin SOT-23 SSM3K335R

Toshiba Single 1 Type N-Channel MOSFET, 6 A, 30 V Enhancement, 3-Pin SOT-23 SSM3K335R

RS Stock No. 171-2542

Brand Toshiba

  • Channel Type: Type N
  • Mount Type: Surface Mount
  • Super Section: Discrete Semiconductors

AED 53.37

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ROHM Common Source 2 Type N-Channel MOSFET, 2 A, 30 V Enhancement, 5-Pin TSMT-5 QS5K2TR

ROHM Common Source 2 Type N-Channel MOSFET, 2 A, 30 V Enhancement, 5-Pin TSMT-5 QS5K2TR

RS Stock No. 694-2874

Brand ROHM

  • Category: MOSFETs
  • Height: 0.85mm
  • Mount Type: Surface Mount

AED 13.48

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onsemi Single PowerTrench 1 Type N-Channel MOSFET, 9 A, 30 V Enhancement, 8-Pin SOIC FDS6692A

onsemi Single PowerTrench 1 Type N-Channel MOSFET, 9 A, 30 V Enhancement, 8-Pin SOIC FDS6692A

RS Stock No. 805-0378

Brand onsemi

  • Height: 1.575mm
  • Mount Type: Surface Mount
  • Pin Count: 8

AED 56.74

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DiodesZetex Isolated 2 Type N-Channel MOSFET, 10 A, 20 V Enhancement, 6-Pin WDFN DMN2013UFX-7

DiodesZetex Isolated 2 Type N-Channel MOSFET, 10 A, 20 V Enhancement, 6-Pin WDFN DMN2013UFX-7

RS Stock No. 921-1050

Brand DiodesZetex

  • Height: 0.8mm
  • Maximum Operating Temperature: 150°C
  • Super Section: Discrete Semiconductors

AED 48.31

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STMicroelectronics STP N channel-Channel Power MOSFET, 60 A, 100 V Enhancement, 2-Pin TO-252 STD70N10F4

STMicroelectronics STP N channel-Channel Power MOSFET, 60 A, 100 V Enhancement, 2-Pin TO-252 STD70N10F4

RS Stock No. 071-9650

Brand STMicroelectronics

  • Maximum Drain Source Resistance Rds: 0.0195Ω
  • Maximum Operating Temperature: 175°C
  • Super Section: Discrete Semiconductors

AED 5.17

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Vishay TrenchFET P-Channel MOSFET, -267 A, -20 V Enhancement, 8-Pin PowerPAK SO-8 SIR5203DP-T1-UE3

Vishay TrenchFET P-Channel MOSFET, -267 A, -20 V Enhancement, 8-Pin PowerPAK SO-8 SIR5203DP-T1-UE3

RS Stock No. 073-5200

Brand Vishay

  • Height: 1.12mm
  • Maximum Drain Source Voltage Vds: -20V
  • Maximum Power Dissipation Pd: 104.1W

AED 17.13

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